UGV3040L-TA3-T Datasheet, PDF (2/4 Pages) Unisonic Technologies – Low Phase Noise

UGV3040
Insulated Gate Bipolar Transistor
 ABSOLUTE MAXIMUM RATINGS (T_A=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Emitter Breakdown Voltage
BV_CER
450
V
Emitter to Collector Voltage Reverse Battery Condition
BV_ECS
30
V
At Starting
T_J=25°C, I_SCIS=14.2A, L=3.0mHy
T_J= 150°C, I_SCIS=10.6A, L=3.0mHy
E_SCIS
300
170
mJ
mJ
Continuous Collector Current
T_C=25°C
T_C=110°C
I_C
21
A
17
A
Gate to Emitter Voltage Continuous
V_GEM
±10
V
TO-220/TO-263
125
Power Dissipation Total at T_C=25°C
TO-220F
41.6
W
TO-252
TO-220/TO-263
P_D
125
1
Power Dissipation Derating T_C>25°C
TO-220F
0.332
W/°C
TO-252
1
Electrostatic Discharge Voltage at 100pF, 1500Ω
ESD
4
kV
Junction Temperature
Storage Temperature Range
T_J
-40 ~ +175
°C
T_STG
-40 ~ +175
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 THERMAL CHARACTERISTICS
Junction to Case
PARAMETER
TO-220/TO-252
TO-263
TO-220F
SYMBOL
θ_JC
RATINGS
1.0
3.0
UNIT
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R219-011.G