UFZ24N Datasheet, PDF (3/6 Pages) Unisonic Technologies – 28A, 60V N-CHANNEL POWER MOSFET

UFZ24N
Power MOSFET
 ELECTRICAL CHARACTERISTICS (T_J=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV_DSS I_D=250µA, V_GS=0V
55
V
Drain-Source Leakage Current
I _DSS
V_DS=55V, V_GS=0V
25 µA
Gate-Source Leakage Current
ON CHARACTERISTICS
Forward
Reverse
I _GSS
V_GS=+20V, V_DS=0V
V_GS=-20V, V_DS=0V
+100 nA
-100 nA
Gate Threshold Voltage
V_GS(TH) V_DS=V_GS, I_D=250µA
2.0
4.0 V
Static Drain-Source On-State Resistance
(Note 2)
R_DS(ON) V_GS=10V, I_D=10A
0.07 Ω
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C _ISS
C _OSS
C _RSS
V_GS=0V, V_DS=25V,
f=1.0MHz
370
pF
140
pF
65
pF
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Q_G
Q _GS
Q _GD
V_GS=10V, V_DS=44V, I_D=10A
(Note 4)
20 nC
5.3 nC
7.6 nC
Turn-ON Delay Time
t _D(ON)
4.9
ns
Rise Time
Turn-OFF Delay Time
t_R
V_DD=28V, I_D=10A, R_G=24Ω,
34
ns
t_D(OFF) RD=2.6 Ω (Note 4)
19
ns
Fall-Time
t_F
27
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I_S
17 A
Maximum Body-Diode Pulsed Current
(Note 1)
I _SM
68 A
Drain-Source Diode Forward Voltage
(Note 2)
V _SD
T_J=25°C, I_S=10A, V_GS=0V
1.3 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
(Note 2)
t _RR
I_F=10A, T_J=25°C,
Q_RR di/dt=100A/µs
56 83 ns
120 180 nC
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Pulse Test: Pulse width≤300µs, Duty cycle≤2%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-901.B