UFZ24N Datasheet, PDF (2/6 Pages) Unisonic Technologies – 28A, 60V N-CHANNEL POWER MOSFET

UFZ24N
Power MOSFET
 ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V _DSS
55
V
Gate-Source Voltage
V _GSS
±20
V
Drain Current
Continuous ^TC=25°C
T _C =100°C
I_D
17
A
12
A
Pulsed (Note 1)
I _DM
68
A
Avalanche Current (Note 1)
I _AR
10
A
Avalanche Energy
Single Pulsed (Note 2)
E _AS
Repetitive (Note 1)
E _AR
71
mJ
4.5
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
5.0
V/ns
Power Dissipation
TO-220
(T _C =25°C)
TO-251/TO-252
P_D
73
W
46
W
Linear Derating Factor
0.30
W/°C
Junction Temperature
T_J
-55~+175
°C
Storage Temperature Range
T _STG
-55~+175
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATING
TO-220
Junction to Ambient
TO-251/TO-252
θ _JA
62.5
100
TO-220
Junction to Case
TO-251/TO-252
θ _JC
1.71
2.7
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. L=1.0mH, I_AS=10A, V_DD=25V, R_G=25Ω, Starting T_J=25°C.
3. I_SD≤10A, di/dt≤280A/µs, V_DD≤BV_DSS, Starting T_J≤175°C.
UNIT
°C/W
°C/W
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-901.B