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| UFR9120 Datasheet, PDF (3/6 Pages) Unisonic Technologies – P CHANNEL POWER MOSFET | |||
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UFR9120
Preliminary
Power MOSFET
 ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS ID=250µA, VGS=0V
Breakdown Voltage Temperature
Coefficient
â³BVDSS/â³TJ Reference to 25°C, ID=-1mA
Drain-Source Leakage Current
IDSS
VDS=-100V, VGS=0V
VDS=-80V, VGS=0V , TJ=150°C
Forward
Gate- Source Leakage Current
Reverse
ON CHARACTERISTICS
IGSS
VGS=+20V
VGS=-20V
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=-250µA
Static Drain-Source On-State Resistance
RDS(ON) VGS=-10V, ID=-3.9A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
CISS
COSS
VGS=0V, VDS=-25V, f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
QGS
VGS=-10V, VDS=-80V, ID=-4.0A
(Note 1, 2)
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDD=-50V, ID= -4.0A, RG= 12â¦,
RD=12⦠(Note 1, 2)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed
Current (Note 1)
IS
MOSFET symbol showing the
ISM
integral reverse p-n junction diode
Drain-Source Diode Forward Voltage
VSD
IS=-3.9A, VGS=0V, TJ =25°C
Body Diode Reverse Recovery Time
tRR
Body Diode Reverse Recovery Charge
QRR
Notes: 1. Pulse Width ⤠300μs, Duty Cycle ⤠2%.
IF=-4.0A, VGS=0V, di/dt = 100A/µs,
TJ =25°C (Note 1)
2. Essentially independent of operating temperature.
MIN TYP MAX UNIT
-100
V
-0.11
V/°C
-25 µA
-250
+100 nA
-100 nA
-2.0
-4.0 V
0.48 â¦
350
pF
110
pF
70
pF
27 nC
5.0 nC
15 nC
14
ns
47
ns
28
ns
31
ns
-6.6 A
-26 A
-2.0 V
100 150 ns
420 630 nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-570.a
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