UFR9120 Datasheet, PDF (2/6 Pages) Unisonic Technologies – P CHANNEL POWER MOSFET

UFR9120
Preliminary
„ ABSOLUTE MAXIMUM RATINGS(T_C = 25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
Continuous
Drain Current, V_GS@-10V
T_C=25°C
T_C=100°C
Pulsed (Note 2)
Avalanche Current (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
V_DSS
V_GSS
I_D
I_DM
I_AR
E_AS
E_AR
dv/dt
-100
±20
-6.6
-4.2
-26
-6.6
100
4.0
-5.0
V
V
A
A
A
A
mJ
mJ
V/ns
Power Dissipation T_C=25°C
Linear Derating Factor
40
W
P_D
0.32
W/°C
Junction Temperature
T_J
+150
°C
Storage Temperature
T_STG
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating; pulse width limited by max. junction temperature.(See Fig.11)
3. Starting T_J=25°C, L=13mH R_G=25Ω, I_AS=-3.9A (See Fig.12)
4. I_SD ≤ -4.0A, di/dt ≤300A/μs,V_DD ≤ V_(BR)DSS, T_J ≤ 25°C
„ THERMAL DATA
PARAMETER
SYMBOL
RATINGS
Junction to Ambient
θ_JA
110
Junction to Case
θ_JC
3.1
Note: 1. For recommended footprint and soldering techniques refer to application note
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-570.a