 English |
|
|
|
|
|
|
|
| UF9Z34 Datasheet, PDF (3/6 Pages) Unisonic Technologies – -17A, -55V P-CHANNEL POWER MOSFET | |||
| |||
| ◁ |
UF9Z34
Preliminary
POWER MOSFET
 ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=-250µA
Breakdown Voltage Temperature
Coefficient
âBVDSS/âTJ Reference to 25°C, ID=-1mA
Drain -Source Leakage Current
IDSS
VDS=-55V, VGS=0V
VDS=-44V, VGS=0V, TJ=150°C
Forward
Gate-Source Leakage Current Reverse
IGSS
VGS=20V, VDS=0V
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Static Drain-Source On-State
Resistance
RDS(ON) VGS=-10V, ID=-10A (Note 2)
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=-250µA
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS VGS=0V, VDS=-25V, f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
Gate to Source Charge
QGS ID=-10A, VDS=-44V, VGS=-10V (Note 2)
Gate to Drain ("Miller") Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDD=-28V, ID=-10A, RG=13â¦
RD=2.6⦠(Note 2)
Fall Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body Diode Continuous
Source Current
IS
Maximum Body-Diode Pulsed Current
(Note 1)
ISM
Drain-Source Diode Forward Voltage
VSD TJ=25°C, IS=-10A, VGS=0V (Note 2)
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
tRR TJ=25°C, IF=-10A, di/dt=-100A/µs
QRR (Note 2)
Note: 1. Starting TJ=25°C, L=3.6mH, RG=25â¦, IAS=-10A
2. Pulse widthâ¤300µs; duty cycleâ¤2%.
MIN TYP MAX UNIT
-55
V
-0.05
V/°C
-25 µA
-250 µA
100 nA
-100 nA
0.10 â¦
-2.0
-4.0 V
620
pF
280
pF
140
pF
35 nC
7.9 nC
16 nC
13
ns
55
ns
30
ns
41
ns
-17 A
-68 A
-1.3 V
54 82 ns
110 160 nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-843.A
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese