UF9Z34 Datasheet, PDF (2/6 Pages) Unisonic Technologies – -17A, -55V P-CHANNEL POWER MOSFET

UF9Z34
Preliminary
POWER MOSFET
„ ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V_DSS
-55
V
Gate-Source Voltage
V_GSS
±20
V
Drain Current
Continuous ^{VGS=-10V, TC=25°C}
V_GS=10V, T_C=100°C
I_D
-17
A
-12
A
Pulsed (Note 2)
I_DM
-68
A
Avalanche Current (Note 2)
I_AR
-10
A
Single Pulse (Note 3)
Avalanche Energy
E_AS
Repetitive (Note 2)
E_AR
180
mJ
5.6
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
-6.7
V/ns
Power Dissipation (T_C=25°C)
Linear Derating Factor
56
W
P_D
0.37
W/°C
Junction Temperature
T_J
-55~+150
°C
Storage Temperature Range
T_STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Starting T_J=25°C, L=3.6mH, R_G=25Ω, I_AS=-10A.
3. I_SD≤-10A, di/dt≤-290A/µs, V_DD≤BV_DSS, T_J≤150°C.
4. Pulse width≤300µs; duty cycle≤2%.
„ THERMAL RESISTANCE
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ_JA
θ_JC
RATINGS
62
2.7
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-843.A