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| UF9Z24_15 Datasheet, PDF (3/4 Pages) Unisonic Technologies – P-CHANNEL POWER MOSFET | |||
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UF9Z24
Power MOSFET
ï® ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS ID=-250µA, VGS=0V
-55
Drain-Source Leakage Current
IDSS VDS=-55V, VGS=0V
Gate-Source Leakage Current
Forward
Reverse
IGSS
VGS=+20V
VGS=-20V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
On State Drain Current (Note 1)
DYNAMIC PARAMETERS (Note 2)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS(TH) VDS=VGS, ID=-250µA
-2.0
RDS(ON) VGS=-10V, ID=-12A (Note 1)
ID(ON) VGS=-10V, VDS=-5V
-12
CISS
COSS
CRSS
VGS=0V, VDS=-25V, f=1.0MHz
(Note 2)
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
QGS
QGD
VGS=-10V, VDS=-44V,
ID=-7.2A (Note 3)
Turn-ON Delay Time
tD(ON)
Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDD=-28V, ID=-7.2A, RG=24â¦
, RD=3.7⦠(Note 3)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS (Note 2)
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD IF=-12A, VGS=0V (Note 1)
Notes: 1. Pulse test; pulse width ⤠300 µs, duty cycle ⤠2 %.
2. Guaranteed by design, not subject to production testing.
3. Independent of operating temperature.
TYP MAX UNIT
V
-25 µA
+100 nA
-100 nA
-4.0 V
0.175 â¦
A
350
pF
170
pF
92
pF
52
nC
6.6
nC
12
nC
13
ns
55
ns
23
ns
37
ns
-12 A
-48 A
-1.6 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R502-A18.C
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