UF9Z24_15 Datasheet, PDF (2/4 Pages) Unisonic Technologies – P-CHANNEL POWER MOSFET

UF9Z24
Power MOSFET
 ABSOLUTE MAXIMUM RATINGS (T_A=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V_DSS
-55
V
Gate-Source Voltage
Drain Current
Continuous T_C=25°C
Pulsed
Single Pulsed Avalanche Current (L=0.1mH)
V_GSS
I_D
I_DM
I_AS
±20
V
-12
A
-48
A
-7.2
A
Single Pulsed Avalanche Energy (L=0.1mH)(Note 1)
E_AS
TO-220
96
mJ
38
W
Power Dissipation
TO-220F/TO-220F1
TO-220F2
P_D
23
W
25
W
TO-252
27
W
Junction Temperature
T_J
+150
°C
Storage Temperature
T_STG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 THERMAL DATA
PARAMETER
TO-220/TO-220F
Junction to Ambient
TO-220F1/TO-220F2
TO-252
TO-220
Junction to Case
TO-220F/TO-220F1
TO-220F2
TO-252
Notes: 1. Duty cycle≤1 %.
SYMBOL
θ_JA
θ_JC
RATINGS
62
110
3.3
5.5
5
4.6
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R502-A18.C