UF9530 Datasheet, PDF (3/6 Pages) Unisonic Technologies – -14A, -100V P-CHANNEL POWER MOSFET

UF9530
Preliminary
POWER MOSFET
„ ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain ("Miller") Charge
Q_G
Q_GS
I_D=-8.4A, V_DS=-80V, V_GS=-10V,
(Note 4)
Q_GD
58 nC
8.3 nC
32 nC
Turn-ON Delay Time
t_D(ON)
15
ns
Rise Time
Turn-OFF Delay Time
t_R
V_DD=-50V, I_D=-8.4A, R_G=9.1Ω
t_D(OFF) RD=6.2Ω, (Note 4)
58
ns
45
ns
Fall Time
t_F
46
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body Diode Continuous Source
Current
I_S
-14 A
Maximum Body-Diode Pulsed Current
(Note 1)
I_SM
-56 A
Drain-Source Diode Forward Voltage
V_SD
T_J=25°C, I_S=-8.4A, V_GS=0V
(Note 4)
-1.6 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
t_RR T_J=25°C, I_F=-8.4A, di/dt=-100A/µs
Q_RR (Note 4)
130 190 ns
650 970 nC
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by
t_ON
L_S+L_D)
Notes: 1. Repetitive rating; pulse width limited by max. junction temperature.
2. Starting T_J=25°C, L=7.0mH, R_G=25Ω, I_AS=-8.4A.
3. I_SD≤-8.4A, di/dt≤-490A/µs, V_DD≤BV_DSS, T_J≤175°C.
4. Pulse width≤300µs; duty cycle≤2%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-834.A