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| UF9530 Datasheet, PDF (2/6 Pages) Unisonic Technologies – -14A, -100V P-CHANNEL POWER MOSFET | |||
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UF9530
Preliminary
POWER MOSFET
 ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-100
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous VGS=-10V, TC=25°C
VGS=-10V, TC=100°C
ID
-14
A
-10
A
Pulsed (Note 1)
IDM
-56
A
Avalanche Current (Note 1)
IAR
-8.4
A
Single Pulse (Note 2)
Avalanche Energy
EAS
Repetitive (Note 1)
EAR
250
mJ
7.9
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
-5.0
V/ns
Power Dissipation (TC=25°C
Linear Derating Factor
79
W
PD
0.53
W/°C
Junction Temperature
TJ
-55~+175
°C
Storage Temperature Range
TSTG
-55~+175
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 THERMAL RESISTANCE
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
62
1.9
 ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
UNIT
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS ID=-250µA, VGS=0V
Breakdown Voltage Temperature
Coefficient
âBVDSS/âTJ Reference to 25°C, ID=-1mA
Drain-Source Leakage Current
IDSS
VDS=-100V, VGS=0V
VDS=-80V, VGS=0V, TJ=150°C
Gate-Source Leakage Current
Forward
Reverse
IGSS
VGS=20V, VDS=0V
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Static Drain-Source On-State Resistance RDS(ON) VGS=-10V, ID=-8.4A (Note 4)
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=-250µA
Forward Transconductance
gFS VDS=-50V, ID=-8.4A
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS VGS=0V, VDS=-25V, f=1.0MHz
Reverse Transfer Capacitance
CRSS
MIN TYP MAX UNIT
-100
V
-0.11
V/°C
-25 µA
-250 µA
100 nA
-100 nA
0.20 â¦
-2.0
-4.0 V
3.2
S
760
pF
260
pF
170
pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-834.A
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