UF9520S Datasheet, PDF (3/5 Pages) Unisonic Technologies – -6.8A, -100V P-CHANNEL POWER MOSFET

UF9520S
Preliminary
POWER MOSFET
„ ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain ("Miller") Charge
Q_G
Q_GS
I_D=-6.8A, V_DS=-80V, V_GS=-10V,
(Note 2)
Q_GD
18 nC
3.0 nC
9.0 nC
Turn-ON Delay Time
t_D(ON)
9.6
ns
Rise Time
Turn-OFF Delay Time
t_R
V_DD=-50V, I_D=-6.8A, R_G=18Ω
t_D(OFF) RD=7.1Ω (Note 2)
29
ns
21
ns
Fall Time
t_F
25
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body Diode Continuous
Source Current
I_S
-6.8 A
Maximum Body Diode Pulsed Current
(Note 1)
I_SM
-27 A
Drain-Source Diode Forward Voltage
V_SD
T_J=25°C, I_S=-6.8A, V_GS=0V
(Note 2)
-6.3 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
t_RR T_J=25°C, I_F=-6.8A,
Q_RR di/dt=100A/µs (Note 2)
98 200 ns
0.33 0.66 µC
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by
t_ON
L_S+L_D)
Notes: 1. Repetitive rating; pulse width limited by max. junction temperature.
2. Pulse width≤300µs; duty cycle≤2%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 5
QW-R502-892.a