UF9520S Datasheet, PDF (2/5 Pages) Unisonic Technologies – -6.8A, -100V P-CHANNEL POWER MOSFET

UF9520S
Preliminary
POWER MOSFET
„ ABSOLUTE MAXIMUM RATING
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous ^{VGS=-10V, TC=25°C}
Drain Current
V_GS=-10V, T_C=100°C
Pulsed (Note 2)
Avalanche Current (Note 2)
Single Pulse (Note 3)
Avalanche Energy _{Repetitive (Note 2)}
Peak Diode Recovery dv/dt (Note 4)
Power Dissipation
T_C=25°C
Power Dissipation (PCB Mount) (Note 5) T_A=25°C
Linear Derating Factor
Linear Derating Factor (PCB Mount) (Note 5)
Junction Temperature
Storage Temperature Range
„ THERMAL RESISTANCE
SYMBOL
V_DSS
V_GSS
I_D
I_DM
I_AR
E_AS
E_AR
dv/dt
P_D
T_J
T_STG
RATINGS
-100
±20
-6.8
-4.8
-27
-6.8
300
6.0
-5.5
60
3.7
0.40
0.025
-55~+175
-55~+175
UNIT
V
V
A
A
A
A
mJ
mJ
V/ns
W
W
W/°C
W/°C
°C
°C
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
Junction to Ambient (PCB Mount) (Note 5)
θ_JA
62
°C/W
40
°C/W
Junction to Case
θ_JC
2.5
°C/W
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive rating; pulse width limited by max. junction temperature.
3. V_DD=-25V, starting T_J=25°C, L=9.7mH, R_G=25Ω, I_AS= -6.8A.
4. I_SD≤-6.8A, di/dt≤110A/µs, V_DD≤BV_DSS, T_J≤175°C.
5. When mounted on 1” square PCB (FR-4 or G-10 Material)
„ ELECTRICAL CHARACTERISTICS (T_J=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV_DSS I_D=-250µA, V_GS=0V
Breakdown Voltage Temperature
Coefficient
∆BV_DSS/∆T_J Reference to 25°C, I_D=-1mA
Drain-Source Leakage Current
I_DSS
V_DS=-100V, V_GS=0V
V_DS=-80V, V_GS=0V, T_J=150°C
Gate-Source Leakage Current
Forward
Reverse
I_GSS
V_GS=-20V, V_DS=0V
V_GS=+20V, V_DS=0V
ON CHARACTERISTICS
Static Drain-Source On-State Resistance R_DS(ON) V_GS=-10V, I_D=-4.1A (Note 2)
Gate Threshold Voltage
V_GS(TH) V_DS=V_GS, I_D=-250µA
Forward Transconductance
g_FS V_DS=-50V, I_D=-4.1A (Note 2)
DYNAMIC PARAMETERS
Input Capacitance
C_ISS
Output Capacitance
C_OSS V_GS=0V, V_DS=-25V, f=1.0MHz
Reverse Transfer Capacitance
C_RSS
MIN TYP MAX UNIT
-100
V
-0.10
V/°C
-100 µA
-500 µA
-100 nA
+100 nA
0.60 Ω
-2.0
-4.0 V
2.0
S
390
pF
170
pF
45
pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R502-892.a