UF840_11 Datasheet, PDF (3/8 Pages) Unisonic Technologies – 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET

UF840
Power MOSFET
„ INTERNAL PACKAGE INDUCTANCE
PARAMETER
SYMBOL
DRAIN INDUCTANCE
Measured from the contact screw on tab to center of die
Measured from the drain lead(6mm from package) to center of die
L_D
SOURCE INDUCTANCE
Measured from the source lead(6mm from header) to source bond pad
L_S
Remark: Modified MOSFET symbol showing the internal devices inductances as below.
MIN TYP MAX UNIT
3.5
nH
4.5
nH
7.5
nH
„ SOURCE TO DRAIN DIODE SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Source to Drain Diode Voltage(Note 1) V_SD T_J = 25°C, I_SD = 8.0A, V_GS = 0V
Continuous Source to Drain Current
Pulse Source to Drain Current
I_SD
I_SDM
Note 2
Reverse Recovery Time
t_rr T_J = 25°C, I_SD = 8.0A, dI_SD/dt = 100A/μs 210
Reverse Recovery Charge
Q_RR T_J = 25°C, I_SD = 8.0A, dI_SD/dt = 100A/μs
2
Notes: 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%.
2. Modified MOSFET symbol showing the integral reverse P-N junction diode as below.
TYP
475
4.6
MAX UNIT
2V
8A
32 A
970 ns
8.2 μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-047,F