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| UF840_11 Datasheet, PDF (2/8 Pages) Unisonic Technologies – 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET | |||
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UF840
Power MOSFET
 ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless Otherwise Specified.)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage (TJ =25°C ~125°C)
VDSS
500
V
Drain to Gate Voltage (RGS = 20kâ¦, TJ =25°C ~125°C)
VDGR
500
V
Gate to Source Voltage
VGSS
±30
V
Drain Current
Continuous
ID
Pulsed
IDM
8.0
A
32
A
TO-220
134
TO-220F/TO-220F1
Power Dissipation (TC=25°C) TO-220F2
PD
44
W
46
TO-263
134
Single Pulse Avalanche Energy
EAS
510
mJ
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 THERMAL DATA
PARAMETER
Junction to Ambient
TO-220
Junction to Case
TO-220F/TO-220F1
TO-220F2
TO-263
SYMBOL
θJA
θJc
RATINGS
62.5
0.93
2.86
2.72
0.93
 ELECTRICAL SPECIFICATIONS (TA =25°C, unless Otherwise Specified.)
UNIT
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Drain-Source Breakdown Voltage
BVDSS ID = 250μA, VGS = 0V
500
V
Gate Threshold Voltage
VGS(TH) VGS = VDS, ID = 250μA
2
4V
On-State Drain Current (Note 1)
ID(ON) VDS > ID(ON) x RDS(ON)MAX, VGS = 10V
8
A
Drain-Source Leakage Current
IDSS
VDS = Rated BVDSS, VGS = 0V
VDS=0.8xRated BVDSS,VGS=0V,TJ= 125°C
25 μA
250 µA
Gate-Source Leakage Current
IGSS VGS = ±30V
±100 nA
Static Drain-Source On-State
Resistance (Note 1)
RDS(ON) ID = 4.4A, VGS = 10V
0.8 0.85 â¦
Turn-On Delay Time
tDLY(ON)
15 21 ns
Turn-Off Delay Time
Turn-On Rise Time
tDLY(OFF) VDD=250V, ID â 8A, RG = 9.1â¦, RL =30â¦
tR (Note 2)
50 74 ns
21 35 ns
Turn-Off Fall Time
tF
20 30 ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
QG(TOT)
QGS
QGD
VGS =10V, ID =8A,VDS =0.8 x Rated BVDSS
IG(REF) =1.5mA (Note 3)
42 63 nC
7
nC
22
nC
Input Capacitance
CISS
1225
pF
Output Capacitance
COSS VDS = 25V, VGS = 0V, f = 1.0MHz
200
pF
Reverse Transfer Capacitance
CRSS
Note : 1. Pulse Test: Pulse widthâ¤300μs, Duty Cycleâ¤2%.
85
pF
2. MOSFET Switching Times are Essentially Independent of Operating Temperature.
3. Gate Charge is Essentially Independent of Operating Temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
QW-R502-047,F
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