UF830Z Datasheet, PDF (3/8 Pages) Unisonic Technologies – 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET

UF830Z
Power MOSFET
„ INTERNAL PACKAGE INDUCTANCE
PARAMETER
SYMBOL MIN TYP MAX UNIT
Internal Drain Inductance
Measured from the contact screw on tab to center of die
Measured from the drain lead(6mm from package) to center of die
L_D
3.5
nH
4.5
nH
Internal Source Inductance
Measured from the source lead(6mm from header) to source bond pad
L_S
7.5
nH
Remark: Modified MOSFET symbol showing the internal devices inductances as below.
„ SOURCE TO DRAIN DIODE SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Source to Drain Diode Voltage
(Note 1)
V_SD
T_J=25°C, I_SD=4.5A, V_GS=0V
Continuous Source to Drain Current
Pulse Source to Drain Current
I_SD
I_SDM
Note 2
Reverse Recovery Time
t_RR
T_J=25°C, I_SD=4.5A, dI/dt=100A/μs 180
Reverse Recovery Charge
Q_RR
T_J=25°C, I_SD=4.5A, dI/dt=100A/μs 0.96
NOTE : 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%.
2. Modified MOSFET symbol showing the integral reverse P-N junction diode as below.
TYP
350
2.2
MAX UNIT
1.6 V
5.5 A
18 A
760 ns
4.3 μC
D
G
S
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 8
QW-R502-612.A