 English |
|
|
|
|
|
|
|
| UF830Z Datasheet, PDF (2/8 Pages) Unisonic Technologies – 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET | |||
| |||
| ◁ |
UF830Z
Power MOSFET
 ABSOLUTE MAXIMUM RATINGS (Ta = 25°C, Unless Otherwise Specified.)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage (TJ=25°C ~125°C)
VDS
500
V
Drain to Gate Voltage (RGS=20kâ¦, TJ=25°C ~125°C)
VDGR
500
V
Gate to Source Voltage
VGS
±30
V
Drain Current
Continuous
ID
Pulsed
IDM
4.5
A
18
A
Power Dissipation (TC = 25°C)
PD
38
W
Single Pulse Avalanche Energy Rating (Note 2)
EAS
300
mJ
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. VDD=50V, starting TJ =25°C, L=25mH, RG=25â¦, peak IAS=4.5A
 THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJc
RATINGS
62.5
3.31
 ELECTRICAL SPECIFICATIONS (Ta =25°C, unless otherwise specified.)
UNIT
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain-Source Breakdown Voltage
BVDSS ID=250μA, VGS=0V
500
Gate Threshold Voltage
VGS(TH) VGS=VDS, ID=250μA
2.0
On-State Drain Current (Note 1)
ID(ON)
VDS>ID(ON)ÃRDS(ON)MAX, VGS=10V 4.5
Drain-Source Leakage Current
VDS= Rated BVDSS, VGS=0V
IDSS
VDS=0.8ÃRated BVDSS
VGS=0V, TJ= 125°C
Gate-Source Leakage Current
IGSS
VGS=±30V
Static Drain-Source On-State Resistance
(Note 2)
RDS(ON)
ID=2.5A, VGS=10V
Forward Transconductance (Note 1)
gFS
VDSâ¥10V, ID=2.7A
2.5
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
Turn-Off Delay Time
tR
tD(OFF)
VDD=250V, IDâ4.5A
RGS=12â¦, RL =54⦠(Note 2)
Turn-Off Fall Time
tF
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
QG
QGS
QGD
VGS=10V, ID=4.5A
VDS=0.8ÃRated BVDSS
IG(REF)=1.5mA (Note 3)
Input Capacitance
Output Capacitance
CISS
COSS
VDS=25V, VGS=0V, f=1.0MHz
Reverse Transfer Capacitance
CRSS
Note: 1. Pulse Test: Pulse widthâ¤300μs, Duty Cycleâ¤2%.
2. MOSFET Switching Times are Essentially Independent of Operating Temperature.
3. Gate Charge is Essentially Independent of Operating Temperature.
TYP MAX UNIT
V
4.0 V
A
25 μA
250 μA
±800 nA
1.3 1.5 â¦
4.2
S
10 17 ns
15 23 ns
33 53 ns
16 23 ns
22 32 nC
3.5
nC
11
nC
600
pF
100
pF
20
pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
QW-R502-612.A
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese