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| UF8010_15 Datasheet, PDF (3/6 Pages) Unisonic Technologies – N-CHANNEL POWER MOSFET | |||
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UF8010
Power MOSFET
ï® ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Forward Current
Gate-Source Reverse Current
BVDSS
IDSS
IGSS
VGS =0 V, ID =250μA
VDS=100V,VGS =0V
VGS = 20 V
VGS = -20 V
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
VGS = 10 V, ID = 45A (Note 1)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS =25 V,VGS =0V, f =1.0MHz
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDS =30V,ID = 1A, RG = 39â¦
VGS = 10V (Note 1)
VDS=80V, VGS=10V
ID= 80A (Note 1)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=80 A ,VGS =0 V,
TJ = 25°C (Note 1)
Maximum Continuous Drain-Source
Diode Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current (Note 1)
ISM
Reverse Recovery Time
tRR
Reverse Recovery Charge
QRR
Note: 1. Pulse width ⤠300μs; duty cycle ⤠2%
IF=80A, VDD=50V, TJ = 150°C
di/dt = 100 A/μs (Note 1)
MIN TYP MAX UNIT
100
V
20 μA
200 nA
-200 nA
2.0
4.0 V
12 15 mâ¦
3617
pF
620
pF
59
pF
174 200 ns
370 450 ns
757 850 ns
392 450 ns
399 450 nC
41
nC
96
nC
1.3 V
80 A
320 A
99 150 ns
460 700 nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-348.D
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