UF8010_15 Datasheet, PDF (2/6 Pages) Unisonic Technologies – N-CHANNEL POWER MOSFET

UF8010
Power MOSFET
 ABSOLUTE MAXIMUM RATINGS (T_J=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Gate to Source Voltage
V_GS
±20
V
Continuous Drain Current (V_GS=10V,T_C=25°C)
I_D
80 (Note 2)
A
Pulsed Drain Current
I_DM
320
A
Avalanche Energy
Single Pulse (Note 2)
E_AS
Repetitive
E_AR
310
mJ
26
mJ
Avalanche Current
I_AR
45
A
Peak Diode Recovery dv/dt (Note 3)
dv/dt
16
V/ns
Power Dissipation(T_C=25°C)
Derating above 25°C
TO-220 / TO-263
TO-220F
TO-220 / TO-263
TO-220F
P_D
260
W
54
W
1.8
W/°C
0.36
W/°C
Junction Temperature
T_J
+150
°C
Storage Temperature
T_STG
-55 ~ + 150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Starting T_J = 25°C, L = 0.31mH, R_G =25Ω, I_AS = 45A.
3. I_SD≤45A, di/dt≤110A/μs, V_DD≤BV_DSS, T_J≤ 150°C
 THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220 / TO-263
TO-220F
SYMBOL
θ_JA
θ_JC
RATINGS
62.5
0.57
2.3
UNIT
°C/W
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-348.D