UF740_11 Datasheet, PDF (3/6 Pages) Unisonic Technologies – 10A, 400V, 0.55Ω N-CHANNEL POWER MOSFET

UF740
Power MOSFET
„ ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
Measured From the Modified MOSFET
Contact Screw on Symbol Showing the
Tab to Center of Internal Devices
Die
Inductances
Internal Drain Inductance
L_D Measured From the
Drain Lead, 6mm
(0.25in) From
Package to Center
of Die
Measured From the
Source Lead, 6mm
Internal Source Inductance
L_S (0.25in) From
Header to Source
Bonding Pad
SOURCE TO DRAIN DIODE SPECIFICATIONS
Source to Drain Diode Voltage
V_SD T_J = 25°C, I_SD = 10A, V_GS = 0V (Note 1)
Continuous Source to Drain
Modified MOSFET
Current
I_S
Symbol Showing
the Integral Reverse
Pulse Source to Drain Current
(Note 2)
P-N Junction Diode
I_SM
MIN TYP MAX UNIT
3.5
nH
4.5
nH
7.5
nH
2.0 V
10 A
40 A
Reverse Recovery Time
t_rr T_J = 25°C, I_SD = 10A, dI_SD/dt = 100A/μs
Reverse Recovery Charge
Q_RR T_J = 25°C, I_SD = 10A, dI_SD/dt = 100A/μs
Notes:
1. Pulse Test: Pulse width ≤ 300μs, Duty Cycle≤2%.
2. Repetitive rating: Pulse width limited by maximum junction temperature.
3. (V_DD=50V, starting T_J =25°C, L=9.1mH, R_G=25Ω, peak I_AS = 10A)
170 390 790 ns
1.6 4.5 8.2 μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-078,E