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| UF740_11 Datasheet, PDF (2/6 Pages) Unisonic Technologies – 10A, 400V, 0.55Ω N-CHANNEL POWER MOSFET | |||
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UF740
Power MOSFET
 ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless Otherwise Specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage (TJ =25°C~125°C)
VDS
400
V
Drain to Gate Voltage (RGS = 20kâ¦) (TJ =25°C~125°C)
VDGR
400
V
Gate to Source Voltage
VGS
±20
V
Continuous
ID
10
A
Drain Current
TC = 100°C
ID
6.3
A
Pulsed
IDM
40
A
TO-220/TO-263
125
Power Dissipation
TO-220F
44
W
TO-220F2
46
TO-220/TO-263
PD
1.0
Derating above 25°C
TO-220F
0.35
W/°C
TO-220F2
0.37
Single Pulse Avalanche Energy Rating(Note3)
EAS
520
mJ
Junction Temperature
TJ
+150
°C
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220/TO-263
TO-220F
TO-220F2
SYMBOL
θJA
θJc
RATINGS
62.5
1.0
2.86
2.72
UNIT
°C/W
°C/W
 ELECTRICAL CHARACTERISTICS (TC =25°C, Unless Otherwise Specified.)
PARAMETER
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
On-State Drain Current (Note 1)
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Forward Transconductance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain âMillerâ Charge
Input Capacitance
Output Capacitance
Reverse - Transfer Capacitance
SYMBOL
TEST CONDITIONS
MIN
BVDSS VGS = 0V, ID = 250μA
400
VGS(THR) VGS = VDS, ID = 250μA
2.0
ID(ON) VDS >ID(ON) x RDS(ON)MAX, VGS =10V
10
IDSS
VDS = Rated BVDSS, VGS = 0V
VDS=0.8 x Rated BVDSS, VGS=0V,TJ=125°C
IGSS VGS = ±20V
RDS(ON) VGS = 10V, ID = 5.2A (Note 1)
gFS VDS ⥠50V, ID = 5.2A (Note 1)
5.8
tDLY(ON)
tR
tDLY(OFF)
tF
VDD = 200V, ID â 10A,
RGS = 9.1â¦, RL = 20â¦, VGS = 10V
MOSFET Switching Times are Essentially
Independent of Operating Temperature
QG(TOT)
QGS
QGD
VGS = 10V, ID = 10A, IG(REF) = 1.5mA,
VDS = 0.8 x Rated BVDSS
Gate Charge is Essentially Independent of
Operating Temperature
CISS
COSS VGS = 0V, VDS =25V, f = 1.0MHz
CRSS
TYP MAX UNIT
V
4.0 V
A
25 μA
250 μA
±500 nA
0.47 0.55 â¦
8.9
S
15 21 ns
25 41 ns
52 75 ns
25 36 ns
41 63 nC
6.5
nC
23
nC
1250
pF
300
pF
80
pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-078,E
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