 English |
|
|
|
|
|
|
|
| UF730-E Datasheet, PDF (3/6 Pages) Unisonic Technologies – N-CHANNEL POWER MOSFET | |||
| |||
| ◁ |
UF730-E
Power MOSFET
ï® ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
On-State Drain Current (Note 3)
BVDSS
ID(ON)
VGS=0V, ID=250μA
VDS>ID(ON)ÃRDS(ON)MAX,
VGS=10V
Drain-Source Leakage Current
Gate-Source Leakage Current
IDSS
VDS=Rated BVDSS, VGS=0V
IGSS
VGS=±20V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250μA
Static Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=3.0A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
CISS
COSS
VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
tD(ON)
tR
tD(OFF)
tF
VDD=30V, IDâ0.5A,
VGS=0~10V, RG=25â¦
(Note 3, 4)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
QG
QGS
QGD
VGS=50V, ID=1.3A,
VDS=10V, IG=100μA
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
VGS=0V, ISD=5.5A
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Reverse Recovery Time
tRR
ISD = 5.5A, dISD/dt = 100A/μs
Reverse Recovery Charge
QRR
(Note 3)
Notes: 1. Repetitive Rating : Pulse width limited by TJ
2. L = 20mH, IAS = 5.5A, VDD = 50V, RG = 25 â¦, Starting TJ = 25°C
3. Pulse Test: Pulse width ⤠300μs, Duty cycle ⤠2%
4. Essentially independent of operating temperature
MIN TYP MAX UNIT
400
V
5.5
A
25 μA
±100 nA
2.0
4.0 V
0.69 0.85 â¦
615 630 pF
115 125 pF
45 55 pF
98 120 ns
104 125 ns
238 250 ns
148 160 ns
31 35 nC
5.5
nC
10
nC
1.6 V
5.5 A
22 A
140 300 660 ns
0.93 2.1 4.3 μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-A06.B
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese