UF730-E Datasheet, PDF (2/6 Pages) Unisonic Technologies – N-CHANNEL POWER MOSFET

UF730-E
Power MOSFET
 ABSOLUTE MAXIMUM RATINGS (T_C = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V_DSS
400
V
Drain-Gate Voltage (R_GS = 20kΩ) (T_J =25°C ~125°C)
V_DGR
400
V
Gate-Source Voltage
V_GSS
±20
V
Continuous Drain Current
Pulsed Drain Current (Note 1)
I_D
5.5
A
I_DM
22
A
Single Pulse Avalanche Energy (Note 2)
Power Dissipation
Junction Temperature
Storage Temperature
E_AS
P_D
T_J
T_STG
300
mJ
73
W
+150
°C
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 THERMAL DATA
PARAMETER
Junction-to-Ambient
Junction-to-Case
SYMBOL
θ_JA
θ_JC
RATINGS
62.5
1.71
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-A06.B