UF634 Datasheet, PDF (3/6 Pages) Unisonic Technologies – ADVANCED POWER MOSFETADVANCED POWER MOSFET

UF634
Preliminary
Power MOSFET
„ ELECTRICAL CHARACTERISTICS (T_C=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV_DSS I_D=250µA, V_GS=0V
Breakdown Voltage Temperature
Coefficient
△BV/△T_{J ID=250µA}
Drain-Source Leakage Current
I_DSS
V_DS=250V
V_DS=200V, T_J=125°C
Gate- Source Leakage Current
I_GSS V_GS=±30V
ON CHARACTERISTICS
Gate Threshold Voltage
V_GS(TH) V_DS=5V, I_D=250µA
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
R_DS(ON) V_GS=10V, I_D=-4.05A
Input Capacitance
Output Capacitance
C_ISS
C_OSS
V_GS=0V, V_DS=25V, f=1.0MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
C_RSS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Q_G
Q_GS
V_GS=10V, V_DS=200V, I_D=8.1A
(Note 1, 2)
Q_GD
Turn-ON Delay Time
t_D(ON)
Rise Time
Turn-OFF Delay Time
t_R V_DD=125V, I_D=8.1A, R_G=12Ω
t_D(OFF) (Note 1, 2)
Fall-Time
t_F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
(Note 2)
V_SD I_S=8.1A, V_GS=0V, T_J=25°C
Maximum Body-Diode Continuous Current
Pulsed-Source Current (Note 1)
I_S Integral reverse pn-diode
I_SM ^{in the MOSFET}
Reverse Recovery Time (Note 2)
Reverse Recovery Charge (Note 2)
t_RR
Q_RR
di_F/dt=100A/µs, T_J=25°C, I_F=8.1A
Note: 1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2. Pulse Test: Pulse Width = 250µs, Duty Cycle ≤2%
3. Essentially Independent of Operating Temperature
MIN TYP MAX UNIT
250
V
0.29
V/°C
10
µA
100
±100 nA
2.0
4.0 V
0.45 Ω
730 950 pF
110 130 pF
50 60 pF
30 40 nC
5.8
nC
13.5
nC
13 40 ns
14 40 ns
53 120 ns
21 50 ns
1.5 V
8.1 A
32 A
190
ns
1.28
µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-454.b