UF634 Datasheet, PDF (2/6 Pages) Unisonic Technologies – ADVANCED POWER MOSFETADVANCED POWER MOSFET

UF634
Preliminary
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (T_C=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Gate-to-Source Voltage
Drain-to-Source Voltage
Continuous Drain Current
T_C=25°C
T_C=100°C
Drain Current-Pulsed (Note 2)
Avalanche Current (Note 2)
Single Pulsed Avalanche Energy (Note 3)
Repetitive Avalanche Energy (Note 2)
Power Dissipation
TO-220
TO-220F1
V_GS
V_DSS
I_D
I_DM
I_AR
E_AS
E_AR
P_D
± 30
V
250
V
8.1
A
5.1
32
A
8.1
A
205
mJ
7.4
mJ
74
W
38
W
Operating Junction Temperature
T_J
+150
°C
Storage Temperature
T_STG
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
3. L=5mH, I_AS=8.1A, V_DD=50V, R_G=27 Ω, Starting T_J =25°C
4. I_SD ≤8.1A, di/dt ≤210A/µs, V_DD≤BV_DSS, Starting T_J =25°C
„ THERMAL RESISTANCE
PARAMETER
Junction to Ambient TO-220/ TO-220F1
Junction to Case
TO-220
TO-220F1
SYMBOL
θ_JA
θ_JC
RATINGS
62.5
1.69
3.29
UNIT
°C/W
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-454.b