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| UF624Z Datasheet, PDF (3/7 Pages) Unisonic Technologies – 4.4A, 250V N-CHANNEL POWER MOSFET | |||
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UF624Z
Preliminary
Power MOSFET
ï® ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
BVDSS ID=250µA, VGS=0V
â³BVDSS/â³TJ Reference to 25°C, ID=1mA
IDSS
VDS=250V, VGS=0V
VDS=200V, VGS=0V , TJ=125°C
IGSS
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
Forward Transconductance
VGS(TH)
RDS(ON)
gFS
VDS=VGS, ID=250µA
VGS=10V, ID=2.6A (Note 2)
VDS=50V, ID=2.6A (Note 2)
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VGS=10V, VDS=50V, ID=1.3A
IG=100μA
VDD=30V, ID=0.5A, RG=25â¦
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
(Note 1)
ISM
Drain-Source Diode Forward Voltage
VSD
TJ=25°C, IS=4.4A, VGS=0V
(Note 2)
Body Diode Reverse Recovery Time
tRR
TJ=25°C, IF=4.4A,
dI/dt=100A/µs (Note 2)
Body Diode Reverse Recovery Charge
QRR
Notes:1. Repetitive rating; pulse width limited by maximum junction temperature.
2. Pulse widthâ¤300µs; duty cycleâ¤2%.
MIN TYP MAX UNIT
250
V
0.36
V/°C
25 µA
250 µA
±10 µA
±10 µA
2.0
4.0 V
1.1 â¦
1.5
S
260
pF
77
pF
15
pF
18 nC
6 nC
4 nC
28
ns
145
ns
90
ns
170
ns
4.4 A
14 A
1.8 V
200 400 ns
0.93 1.9 µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 7
QW-R502-856.b
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