UF624Z Datasheet, PDF (2/7 Pages) Unisonic Technologies – 4.4A, 250V N-CHANNEL POWER MOSFET

UF624Z
Preliminary
Power MOSFET
 ABSOLUTE MAXIMUM RATINGS (T_C=25°C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous
V_GS at 10V, T_C=25°C
V_GS at 10V, T_C=100°C
Pulsed (Note 2)
Avalanche Current (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
SYMBOL
V_DSS
V_GSS
I_D
I_DM
I_AR
E_AS
E_AR
dv/dt
RATINGS
250
±20
4.4
2.8
14
4.4
100
5.0
4.8
UNIT
V
V
A
A
A
A
mJ
mJ
V/ns
Power Dissipation (T_C=25°C)
Linear Derating Factor
P_D
50
W
0.40
W/°C
Junction Temperature
T_J
-55~+150
°C
Storage Temperature Range
T_STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive rating; pulse width limited by maximum junction temperature.
3. V_DD=50V, starting T_J=25°C, L=10.33mH, Rg=25Ω, I_AS=4.4A.
4. I_SD≤4.4A, dI/dt≤90A/μs, V_DD≤V_DS, T_J≤150°C.
 THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ_JA
θ_JC
RATINGS
110
2.5
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 7
QW-R502-856.b