TL082 Datasheet, PDF (3/9 Pages) National Semiconductor (TI) – Wide Bandwidth Dual JFET Input Operational Amplifier

UTC TL082 LINEAR INTEGRATED CIRCUIT
UTC TL082C ELECTRICAL CHARACTERISTICS
( Vcc=±15V, Ta=25°C,Tmin=0°C ,Tmax=70°C , unless otherwise specified)
PARAMETER
SYMBOL
MIN
Input Offset Voltage (Rs=50Ω)
Ta=25°C
Vio
Tmin≦Ta≦Tmax
Input Offset Voltage Drift
Dvio
Input Offset Current *
Ta=25°C
Iio
Tmin≦Ta≦Tmax
Input Bias Current *
Ta=25°C
Iib
Tmin≦Ta≦Tmax
Input Common Mode Voltage Range
Vicm
±11
Output Voltage Swing
Ta=25°C, RL=2kΩ,
Ta=25°C, RL=10kΩ
Tmin≦Ta≦Tmax, RL=2kΩ
Tmin≦Ta≦Tmax, RL=10kΩ
10
±Vopp
12
10
12
Large Signal Voltage Gain (RL=2kΩ,
Vo=±10V) Ta=25°C
Tmin≦Ta≦Tmax
Avd
25
15
Gain Bandwidth Product (Ta=25°C)
Vin=10mV,RL=2kΩ, CL=100pF,f=100kHZ
GBP
2.5
Input Resistance
Ri
Common Mode Rejection Ratio (RS=50Ω)
Ta=25°C
CMR
70
Tmin≦Ta≦Tmax
70
TYP
3
10
5
20
-12~+15
12
13.5
200
4
10¹²
86
MAX
10
13
100
10
400
20
UNIT
mV
µV/°C
pA
nA
pA
nA
V
V
V/mV
MHz
Ω
dB
Supply Voltage Rejection Ratio (RS=50Ω)
Ta=25°C
Tmin≦Ta≦Tmax
Supply Current,no load
Ta=25°C
Tmin≦Ta≦Tmax
Channel Separation (Av=100, Ta=25°C)
Output Short-circuit Current
Ta=25°C
Tmin≦Ta≦Tmax
Slew Rate (Ta=25°C)
Vi=10V, RL=2kΩ, CL=100pF,unity gain
Rise Time (Ta=25°C)
Vi=20mV, RL=2kΩ, CL=100pF,unity gain
Overshoot (Ta=25°C)
Vi=20mV, RL=2kΩ, CL=100pF,unity gain
Total Harmonic Distortion (Ta=25°C)
Av=20dB, f=1kHzRL=2kΩ, CL=100pF,
Vo=2Vpp)
Phase Margin
Equivalent Input Noise Voltage
(RS=100Ω, f=1KHz)
SVR
Icc
V01/V02
Ios
SR
tr
Kov
THD
φm
en
70
86
dB
70
1. 4
2. 5
mA
2.5
120
dB
10
40
60
mA
10
60
8
16
V/µs
0.1
µs
10
%
0.01
%
45
Degrees
nV
15
Hz
*The Input bias currents are junction leakage currents, which approximately double for every 10°C increase
in the junction temperature.
UTC UNISONIC TECHNOLOGIES CO., LTD. 3
QW-R105-019,A