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| TIP112_15 Datasheet, PDF (3/4 Pages) Unisonic Technologies – NPN EPITAXIAL SILICON TRANSISTOR | |||
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TIP112
 TYPICAL CHARACTERISTICS
Static Characteristics
2.0
IB=500uA
1.8 IB=450uA
1.6 IB=400uA
IB=300uA
IB=350uA
1.4
IB=250uA
1.2
IB=200uA
1.0
0.8
0.6
IB=150uA
0.4
0.2
0.0
0
1
2
3
4
5
Collector-Emitter Voltage, VCE (V)
NPN SILICON TRANSISTOR
10000
1000
DC Current Gain
VCE=4V
100
10
0.01
0.1
1
10
Collector Current, IC (A)
Safe Operating Area
10
5mS 1mS
DC
1
0.1
1
10
100
Collector-Emitter Voltage, VCE (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Power Derating
80
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175
Case Temperature, TC (°C)
3 of 4
QW-R203-022.D
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