TIP112_15 Datasheet, PDF (2/4 Pages) Unisonic Technologies – NPN EPITAXIAL SILICON TRANSISTOR

TIP112
NPN SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATING (T_C =25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
V_CBO
100
V
Collector to Emitter Voltage
V_CEO
100
V
Emitter to Base Voltage
V_EBO
5
V
Collector Current
DC
I_C
Peak
I_CM
2
A
4
Base Current (DC)
I_B
50
mA
TO-126
10
Collector Dissipation
TO-220
P_C
TO-252
40
W
15
Junction Temperature
T_J
150
°C
Storage Temperature
T_STG
-65~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS (T_C =25°C, unless otherwise specified)
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Collector-Base Cut-Off Current
Collector-Emitter Cut-Off Current
Emitter-Base Cut-Off Current
DC Current Gain
Collector Capacitance
SYMBOL
TEST CONDITIONS
V_CEO(SUS) I_C=30mA, I_B=0A
V_CE(SAT) I_C=2A, I_B=8mA
V_BE(ON) V_CE=4V, I_C=2A
I_CBO V_CB=100V, I_E=0A
I_CEO V_CE=50V, V_B=0A
I_EBO V_EB=5V, I_C=0A
h_FE
V_CE=4V, I_C=1A
V_CE=4V, I_C=2A
C_OB V_CB=10V, I_E=0A, f=0.1MHz
MIN TYP MAX UNIT
100
V
2.5
V
2.8
1
mA
2
mA
2
mA
1000
500
100 pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R203-022.D