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| S8550_09 Datasheet, PDF (3/4 Pages) Unisonic Technologies – LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR | |||
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S8550
 TYPICAL CHARACTERISTICS
Static Characteristics
-0.5
IB=-3.0mA
-0.4
IB=-2.5mA
IB=-2.0mA
-0.3
IB=-1.5mA
-0.2
IB=-1.0mA
-0.1
IB=-0.5mA
0
0 -0.4 -0.8 -1.2 -1.6 -2.0
Collector-Emitter Voltage, VCEO (V)
Base-Emitter on Voltage
-102
-101
VCE=-1V
-100
-10-1
0
-0.2 -0.4 -0.6 -0.8 -1.0
Base-Emitter Voltage, VBEO (V)
Current Gain-Bandwidth Product
103
VCE=-10V
102
101
100
-100
-101
-102
-103
Collector Current, IC (mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PNP SILICON TRANSISTOR
DC Current Gain
103
VCE=-1V
102
101
100
-10-1
-100
-101
-102
-103
Collector Current, IC (mA)
-104
Saturation Voltage
IC=10xIB
-103
VBE(SAT)
-102
VCE(SAT)
-101
-10-1
-100
-101
-102
Collector Current, IC (mA)
-103
103
Collector Output Capacitance
f=1MHz
IE=0
102
101
100
-100
-101
-102
-103
Collector-Base Voltage, VCBO (V)
3 of 4
QW-R201-014.B
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