S8550_09 Datasheet, PDF (2/4 Pages) Unisonic Technologies – LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR

S8550
PNP SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATING (Ta =25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V_CBO
-30
V
Collector-Emitter Voltage
V_CEO
-20
V
Emitter-Base Voltage
V_EBO
-5
V
Collector Current
I_C
-700
mA
Collector Dissipation (Ta =25°C)
P_C
1
W
Junction Temperature
T_J
150
°C
Storage Temperature
T_STG
-65 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise specified.)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
SYMBOL
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
h_FE1
h_FE2
h_FE3
V_CE(SAT)
V_BE(SAT)
V_BE
f_T
Cob
„ CLASSIFICATION OF hFE2
TEST CONDITIONS
I_C =-100μA, I_E =0
I_C =-1mA, I_B =0
I_E =-100μA, I_C =0
V_CB =-30V, I_E =0
V_EB =-5V, I_C =0
V_CE =-1V, I_C =-1mA
V_CE =-1V, I_C =-150mA
V_CE =-1V, I_C =-500mA
I_C =-500mA, I_B =-50mA
I_C =500mA, I_B =-50mA
V_CE =-1V, I_C =-10mA
V_CE =-10V, I_C =-50mA
V_CB =10V, I_E =0, f =1MHz
MIN TYP MAX UNIT
-30
V
-20
V
-5
V
-1 μA
-100 nA
100
120 110 400
40
-0.5 V
-1.2 V
-1.0 V
100
MHz
9.0
pF
RANK
RANGE
C
120-200
D
160-300
E
280-400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R201-014.B