PZTA92 Datasheet, PDF (3/3 Pages) NXP Semiconductors – PNP high-voltage transistor

UTCPZTA92/93 PNP EPITAXIAL SILICON TRANSISTOR
TYPICAL PERFORMANCE CHARACTERISTICS
Fig.1 DC Current Gain
103
VCE=-10V
102
101
Fig.2 Saturation Voltage
-104
Ic=10*IB
VCE(sat)
-103
VBE(sat)
-102
100
-100
-101
-102
-103
-104
Collector current, Ic(mA)
-101
-100
-101
-102
-103
-104
Collector current, Ic(mA)
Fig.4 Active-region safe
operating area
3
-10
-102
DC
limitat1io.5nWTcT=h2e5r°mCal
MPSA93
-101
625mW Thermal
limitation Ta=25°C
bonding breakdown
limitation Tj=150°C
MPSA92
-101
-100
-101
-102
-103
Collector-Emitter voltage ( v)
Fig.5 Current Gain
Bandwidth product
3
10
VCE=-20V
f=100MHz
102
101
-100
-101
-102
Collector current, Ic(mA)
Fig.3 Capacitance
102
CIB
101
CCB
-10-1
-100
-101
-102
Collector-Base voltage(V)
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