PZTA92 Datasheet, PDF (2/3 Pages) NXP Semiconductors – PNP high-voltage transistor

UTCPZTA92/93 PNP EPITAXIAL SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-Base Breakdown Voltage BVCBO
Ic=-100µA,IE=0
UTC PZTA92
-300
UTC PZTA93
-200
Collector-Emitter Breakdown Voltage BVCEO
Ic=-1mA,IB=0
UTC PZTA92
-300
UTC PZTA93
-200
Emitter-Base Breakdown Voltage
BVEBO
IE=-100µA,Ic=0
-5
Collector Cut-Off Current
ICBO
UTC PZTA92
VCB=-200V,IE=0
UTC PZTA93
VCB=-160V,IE=0
Emitter Cut-Off Current
IEBO
VEB=-3V,Ic=0
DC Current Gain(note)
hFE
VCE=-10V,Ic=-1mA
60
VCE=-10V,Ic=-10mA
80
VCE=-10V,Ic=-30mA
80
Collector-Emitter Saturation Voltage VCE(sat)1
Ic=-20mA,IB=-2mA
Base-Emitter Saturation Voltage VBE(sat)1
Ic=-20mA,IB=-2mA
Current Gain Bandwidth Product
fT
VCE=-20V,Ic=-10mA,
50
f=100MHz
Collector Base Capacitance
Ccb
VCB=-20V,IE=0
UTC PZTA92
f=1MHz
UTC PZTA93
Note:Pulse test:PW<300µs,Duty Cycle<2%, VCE(SAT)1<200mV(Class SIN)
TYP
MAX UNIT
V
V
V
-0.25 µA
-0.25
-0.10 µA
-0.5
-0.90
V
V
MHz
6 pF
8
UTC UNISONIC TECHNOLOGIES CO. LTD
2
QW-R207-006,B