MMBTA42 Datasheet, PDF (3/4 Pages) NXP Semiconductors – NPN high-voltage transistor

MMBTA42
„ TYPICAL CHARACTERISTICS
DC Current Gain vs. Output Current
1K
V_CE=5V
500
Ta=150℃
200
Ta=25℃
100
Ta=-50℃
50
20
10
5
2
1
1 2 5 10 20 50 100 200 500
Collector Current, I_C (mA)
Collector Emitter Saturation vs.
Collector Current
2.0
1.8 ^IC/IB=10
1.6
1.4
1.2
1.0
Ta=150℃
0.8
0.6
Ta=25℃
0.4
Ta=-50℃
0.2
0.0
1 2 5 10 20 50 100 200 500
Collector Current, I_C (mA)
NPN SILICON TRANSISTOR
DC Current Gain vs. Output Current
1K
V_CE=10V
500
Ta=150℃
200
Ta=25℃
100
Ta=-50℃
50
20
10
5
2
1
1 2 5 10 20 50 100 200 500
Collector Current, I_C (mA)
Collector Emitter Saturation vs.
Collector Current
1.0
V_CE=5V
0.9
0.8
Ta=-50℃
0.7
0.6
05
Ta=25℃
0.4
0.3
0.2
Ta=150℃
0.1
0.0
0.1
1
10
100
Collector Current, I_C (mA)
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QW-R206-004,C