MMBTA42 Datasheet, PDF (2/4 Pages) NXP Semiconductors – NPN high-voltage transistor

MMBTA42
NPN SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V_CBO
300
V
Collector-Emitter Voltage
V_CEO
300
V
Emitter-Base Voltage
Collector Dissipation (T_A=25℃)
V_EBO
6
V
P_C
350
mW
Collector Current
Junction Temperature
Storage Temperature
I_C
500
mA
T_J
+150
℃
T_STG
-55 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS (T_J=25℃, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Current Gain Bandwidth Product
Collector Base Capacitance
SYMBOL
BV_CBO
BV_CEO
BV_EBO
V_CE(SAT)
V_BE(SAT)
I_CBO
I_EBO
h_FE
f_T
C_cb
TEST CONDITIONS
Ic=100μA, I_E=0
Ic=1mA, I_B=0
I_E=100μA, Ic=0
Ic=20mA, I_B=2mA
Ic=20mA, I_B=2mA
V_CB=200V, I_E=0
V_BE=6V, Ic=0
V_CE=10V, Ic=1mA
V_CE=10V, Ic=10mA
V_CE=10V, Ic=30mA
V_CE=20V, Ic=10mA, f=100MHz
V_CB=20V, I_E=0, f=1MHz
MIN TYP MAX UNIT
300
V
300
V
6
V
0.2
V
0.90 V
100 nA
100 nA
80
80
300
80
50
MHz
3
pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R206-004,C