MMBT1815L Datasheet, PDF (3/4 Pages) Unisonic Technologies – HIGH FREQUENCY NPN AMPLIFIER TRANSISTOR

MMBT1815
TYPICAL CHARACTERISTICS
Static Characteristics
100
80
60
40
20
0
0
IB =3 0 0µA
IB =2 5 0µA
IB =2 0 0µA
IB =1 5 0µA
IB =1 0 0µA
IB =5 0µA
4
8
12
16
20
Collector-Emitter Voltage ( V)
Base-Emitter On Voltage
102
101
V CE =6 V
NPN SILICON TRANSISTOR
DC Current Gain
103
VCE =6 V
102
101
100
10-1
100
101
102
103
CollectorCurrent, Ic (mA)
Saturation Voltage
104
Ic=1 0*IB
3
10
VBE ^{( SAT)}
100
10-1
0
0. 2
0.4
0.6
0. 8
1.0
Base-EmitterVoltage (V)
Current Gain-Bandwidth
Product
103
V CE =6V
102
102
VCE ^{( SAT)}
101
10-1
102
100
101
102
103
CollectorCurrent , Ic (mA)
Collector Output
Capacitance
f=1MH z
101
IE =0
101
100
10-1
100
101
102
Collector Current, Ic (mA)
0
10
10-1
100
101
102
103
Collector-Base Voltage (V)


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