MMBT1815L Datasheet, PDF (2/4 Pages) Unisonic Technologies – HIGH FREQUENCY NPN AMPLIFIER TRANSISTOR

MMBT1815
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING ( Ta=25°C , unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
5
V
Collector Dissipation (Ta=25°C)
SOT-23
SOT-523/SOT-113/SOT-323
PC
250
mW
200
mW
Collector Current
IC
150
mA
Base Current
IB
50
mA
Junction Temperature
Storage Temperature
T_J
T_STG
150
Ċ
-55 ~ +150
Ċ
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Transition Frequency
Output Capacitance
Noise Figure
SYMBOL
VCE(SAT)
VBE(SAT)
ICBO
IEBO
hFE1
hFE2
fT
COB
NF
TEST CONDITIONS
Ic = 100mA, IB = 10mA
Ic = 100mA, IB = 10mA
VCB = 60V, IE = 0
VEB = 5V, Ic = 0
VCE = 6V, Ic = 2mA
VCE = 6V, Ic = 150mA
VCE = 10V,Ic = 50mA
VCB = 10V, IE = 0, f = 1MHz
Ic = -0.1mA, VCE = 6V
RG = 10kΩ, f = 100Hz
MIN TYP MAX UNIT
0.1 0.25 V
1.0 V
100 nA
100 nA
120
700
25
80
MHz
2.0 3.0 pF
1.0 1.0 dB
CLASSIFICATION OF h_FE1
RANK
RANGE


Y
120-240
GR
200-400
BL
350-700
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-014,F