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| HE8051_07 Datasheet, PDF (3/4 Pages) Unisonic Technologies – LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR | |||
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HE8051
TYPICAL CHARACTERISTICS
Fig. 1 Static Characteristics
0.5
IB=3.0mA
0.4
IB=2.5mA
IB=2.0mA
0.3
IB=1.5mA
0.2
IB=1.0mA
IB=0.5mA
0.1
0
0 0.4 0.8 1.2 1.6 2.0
Collector-Emitter Voltage, VCE ( V)
Fig. 3 Base-Emitter On Voltage
103
VCE=1V
102
NPN SILICON TRANSISTOR
Fig. 2 DC Current Gain
103
102
VCE=1V
101
1010 0-1
100
101
102
Collector Current, IC (mA)
103
Fig. 4 Saturation Voltage
104
IC=10·IB
103
VBE(SAT)
101
100
0.2 0.4 0.6 0.8
1.0 1.2
Base-Emitter Voltage, VBE (V)
Fig. 5 Current Gain-Bandwidth Product
103
VCE=10V
102
101
102
VCE(SAT)
10110-1
100
101
102
Collector Current, IC (mA)
103
Fig. 6 Collector Output Capacitance
103
102
f=1MHz
IE=0
101
100
100
101
102
103
Collector Current, IC (mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
100
100
101
102
103
Collector-Base Voltage, VCB (V)
3 of 4
QW-R201-046.B
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