HE8051_07 Datasheet, PDF (2/4 Pages) Unisonic Technologies – LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR

HE8051
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25Ċ, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V_CBO
40
V
Collector-Emitter Voltage
V_CEO
25
V
Emitter-Base Voltage
Collector Dissipation (Ta=25Â¥C)
V_EBO
6
V
P_C
1
W
Collector Current
Junction Temperature
Storage Temperature
I_C
1.5
A
T_J
+150
Â¥
T_STG
-40 ~ +150
Â¥
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25Â¥, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Current Gain Bandwidth Product
Output Capacitance
SYMBOL
TEST CONDITIONS
BV_CBO I_C=100µA, I_E=0
BV_CEO I_C=2mA, I_B=0
BV_EBO I_E=100µA, I_C=0
I_CBO V_CB=35V, I_E=0
I_EBO V_EB=6V, I_C=0
h_FE1 V_CE=1V, I_C=5mA
h_FE2 V_CE=1V, I_C=100mA
h_FE3 V_CE=1V, I_C=800mA
V_CE(SAT) I_C=800mA, I_B=80mA
V_BE(SAT) I_C=800mA, I_B=80mA
V_BE V_CE=1V, I_C=10mA
f_T V_CE=10V, I_C=50mA
C_ob V_CB=10V, I_E=0, f=1MHz
CLASSIFICATION OF h_FE2
RANK
RANGE


C
120-200
D
160-300
MIN TYP MAX UNIT
40
V
25
V
6
V
100 nA
100 nA
45
135
85
160 500
40
110
100
9.0
0.5
V
1.2
V
1.0
V
MHz
pF
E
250-500
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R201-046.B