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| BC337_15 Datasheet, PDF (3/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors | |||
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BC337/BC338
ï® TYPICAL CHARACTERISTICS
Collector Current vs.
5K
Base-Emitter Voltage
Common Emitter
1K VCE=1V
300
100
30
10
3
1
0.2
0.4
0.6
0.8
1.0
Base-Emitter Voltage, VBE (V)
Collector Current vs.
0.7
Collector-Emitter Voltage
0.6
IB=10mA
IB=9mA
0.5
IB=8mA IB=7mA
IB=6mAIB=5mA
0.4
IB=4mA
0.3
IB=3mA
IB=2mA
0.2
IB=1mA
0.1
0 0 1 2 3 4 5 6 7 8 9 10
Collector-Emitter Voltage, VCE (V)
NPN SILICON TRANSISTOR
Collector Power Dissipation vs.
Ambient Temperature
700
600
500
400
300
200
100
0 0 25 50 75 100 125 150 175
Ambient Temperature, TA (â)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 3
QW-R201-039.E
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