BC337_15 Datasheet, PDF (2/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

BC337/BC338
NPN SILICON TRANSISTOR
 ABSOLUTE MAXIMUM RATING (T_A=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
BC337
BC338
V_CES
50
V
30
V
Collector-Emitter Voltage
BC337
BC338
V_CEO
45
V
25
V
Emitter-Base Voltage
Collector Current (DC)
V_EBO
I_C
5
V
800
mA
Collector Dissipation
Derate Above 25°C
P_C
625
mW
5
mW/°C
Junction Temperature
Operating Temperature
T_J
T_OPR
125
°C
-20 ~ +85
°C
Storage Temperature
T_STG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ_JA
θ_Jc
RATINGS
200
83.3
 ELECTRICAL CHARACTERISTICS (T_A=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-Emitter
Breakdown
Voltage
BC337
BC338
BV_CEO I_C=10mA, I_B=0
45
25
Collector-Emitter
Breakdown
Voltage
BC337
BC338
BV_CES I_C=0.1mA, V_BE=0
50
30
Emitter-Base Breakdown Voltage
BV_EBO I_E=0.1mA, I_C=0
5
Collector Cut-off Current
BC337
BC338
I_CES
V_CE=45V, I_B=0
V_CE=25V, I_B=0
DC Current Gain
h_FE1 V_CE=1V, I_C=100mA
100
h_FE2 V_CE=1V, I_C=300mA
60
Collector-Emitter Saturation Voltage
V_CE(SAT) I_C=500mA, I_B=50mA
Base-Emitter on Voltage
Output Capacitance
V_BE(ON) V_CE=1V, I_C=300mA
C_ob V_CB=10V, I_E=0, f=1MHz
Current Gain Bandwidth Product
f_T V_CE=5V, I_C=10mA, f=50MHz
 CLASSIFICATION OF h_FE1
RANK
h_FE1
16
100-250
25
160-400
UNIT
°C/W
°C/W
TYP MAX UNIT
V
V
V
V
V
2 100 nA
2 100 nA
630
0.7 V
1.2 V
12
pF
100
MHz
40
250-630
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R201-039.E