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| BC327_15 Datasheet, PDF (3/4 Pages) SeCoS Halbleitertechnologie GmbH – PNP Plastic-Encapsulate Transistor | |||
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BC327/328
ï® TYPICAL CHARACTERISTICS
PNP EPITAXIAL SILICON TRANSISTOR
Figure 3. DC Current Gain
1000
PULSE
VCE=-2.0V
100
-1.0V
10
1
-0.1 -1 -10
-100 -1000
Collector Current, IC (mA)
Figure 5. Base-Emitter On Voltage
-1000
VCE=-1V
PULSE
-100
-10
-1
-0.1
-0.4 -0.5 -0.6 -0.7 -0.8 -0.9
Base-Emitter On Voltage, VBE (V)
Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
-10
IC=10IB
PULSE
-1
VCE(sat)
-0.1
VBE(sat)
-0.01
-0.1 -1 -10 -100 -1000
Collector Current, IC(mA)
Figure 6. Gain Bandwidth Product
1000
VCE=-0.5V
100
10
-1
-100
-1000
Collector Current, IC (mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R201-038.B
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