BC327_15 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – PNP Plastic-Encapsulate Transistor

BC327/328
PNP EPITAXIAL SILICON TRANSISTOR
 ABSOLUTE MAXIMUM RATING (T_A=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-emitter voltage
BC327
BC328
V_CES
-50
-30
V
V
Collector-emitter voltage
BC327
BC328
V_CEO
-45
-25
V
V
Emitter-base voltage
Collector current (DC)
V_EBO
-5
V
I_C
-800
mA
Collector dissipation
Junction Temperature
P_C
625
mW
T_J
125
°С
Operating Temperature
Storage Temperature
T_OPR
-20 ~ +85
°С
T_STG
-40 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 ELECTRICAL CHARACTERISTICS (T_A=25°С, unless otherwise specified)
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector Cut-off Current
BC327
BC328
BC327
BC328
BC327
BC328
DC current gain
Collector-emitter saturation voltage
Base-emitter on voltage
Current gain bandwidth product
Output Capacitance
 CLASSIFICATION OF h_FE
SYMBOL TEST CONDITIONS MIN
BV_CEO I_C=-10mA, I_B=0
-45
-25
BV_CES I_C=-0.1mA, V_BE=0
-50
-30
BV_EBO I_E=-10mA, I_C=0
-5
I_CES
V_CE=-45V, I_B=0
V_CE=-25V, I_B=0
h_FE1
V_CE=-1V, I_C=-100mA
100
h_FE2
V_CE=-1V, I_C=-300mA
40
V_CE(SAT) I_C=-500mA, I_B=-50mA
V_BE(ON) V_CE=-1V, I_C=-300mA
f_T
V_CE=-5V, I_C=-10mA,
f=20MHz
C_ob
V_CB=-10V, I_E=0, f=1MHz
TYP
-2
-2
100
12
MAX
-100
-100
630
UNIT
V
V
V
V
V
V
V
-0.7 V
-1.2 V
MHz
pF
RANK
h_FE1
h_FE2
16
100-250
60~
25
160-400
100~
40
250-630
170~
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R201-038.B