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| 9N80_1112 Datasheet, PDF (3/5 Pages) Unisonic Technologies – 9A, 800V N-CHANNEL POWER MOSFET | |||
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9N80
Preliminary
Power MOSFET
 ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS ID=250µA, VGS=0V
Breakdown Voltage Temperature Coefficient â³BVDSS/â³TJ ID=250µA
Drain-Source Leakage Current
IDSS
VDS=800V
Forward
Gate- Source Leakage Current
Reverse
IGSS
VGS=+30V
VGS=-30V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=5V, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=4.5A
Forward Transconductance
gFS
VDS=50V, ID=4.5A (Note 1)
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS
VGS=0V, VDS=25V, f=1.0MHz,
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
QGS
VGS=10V, VDS=640V, ID=9A,
(Note 1, 2)
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDD=400V, ID=9 A, RG=16â¦,
(Note 1, 2)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Pulsed Drain-Source Diode
Forward Current (Note 1)
IS
Integral reverse pn-diode in the
ISM
mosfet
Drain-Source Diode Forward Voltage (Note 1)
VSD
IS=9A, VGS=0V, TJ=25°C
Reverse Recovery Time
trr
Reverse Recovery Charge
QRR
Note: 1. Pulse Test: Pulse width ⤠250µs, Duty cycle ⤠2%
TJ=25°C, IF=9A,
dIF/dt=100A/µs, (Note 1)
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
800
V
0.96
V/°C
25 µA
+100 nA
-100 nA
3
5V
1.05 1.3 â¦
5.54
S
2020 2600 pF
195 230 pF
82 95 pF
93 120 nC
14.3
nC
42.1
nC
25 60 ns
37 85 ns
113 235 ns
42 95 ns
9A
36 A
1.4 V
560
ns
8.4
µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 5
QW-R502-493.e
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