9N80_1112 Datasheet, PDF (2/5 Pages) Unisonic Technologies – 9A, 800V N-CHANNEL POWER MOSFET

9N80
Preliminary
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS(T_C = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V_DSS
800
V
Gate-Source Voltage
Avalanche Current (Note 2)
V_GSS
I_AR
±30
V
9
A
Continuous
Drain Current (Continuous)
I_D
Pulsed (Note 2)
I_DM
9
A
36
A
Avalanche Energy
Single Pulsed (Note 3)
E_AS
Repetitive (Note 2)
E_AR
900
mJ
24
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
2.0
V/ns
TO-220
147
Power Dissipation
TO-220F1
P_D
49
W
TO-220F2
51
Junction Temperature
T_J
+150
°C
Storage Temperature
T_STG
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 21mH, I_AS = 9A, V_DD = 50V, R_G = 27Ω, Starting T_J = 25°C
4. I_SD ≤ 9A, di/dt ≤ 180A/µs, V_DD ≤ BV_DSS, Starting T_J = 25°C
„ THERMAL DATA
PARAMETER
Junction to Ambient
TO-220
Junction to Case
TO-220F1
TO-220F2
SYMBOL
θ_JA
θ_JC
RATINGS
62.5
0.85
2.55
2.45
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R502-493.e