9N100 Datasheet, PDF (3/5 Pages) Unisonic Technologies – 9A, 1000V N-CHANNEL POWER MOSFET

9N100
Preliminary
„ ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
SWITCHING PARAMETERS (Note 1, Note 2)
Total Gate Charge
Q_G
Gate-Source Charge
Q_GS V_DS=800V, V_GS=10V, I_D=8A
Gate-Drain Charge
Q_GD
Turn-ON Delay Time
t_D(ON)
Turn-ON Rise Time
Turn-OFF Delay Time
t_R
t_D(OFF)
V_DD=500V, I_D=8A, R_G=25Ω
Turn-OFF Fall Time
t_F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I_S
Maximum Body-Diode Pulsed Current
I_SM
Drain-Source Diode Forward Voltage
V_SD
I_S =9A, V_GS=0V
Note: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
Power MOSFET
MIN TYP MAX UNIT
53 70 nC
13
nC
23
nC
50 110 ns
95 200 ns
122 254 ns
80 170 ns
9A
36 A
1.4 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 5
QW-R502-735.a