9N100 Datasheet, PDF (2/5 Pages) Unisonic Technologies – 9A, 1000V N-CHANNEL POWER MOSFET

9N100
Preliminary
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
V_DSS
1000
V
Gate to Source Voltage
V_GSS
±30
V
Continuous Drain Current (T_C=25°C)
I_D
9
A
Pulsed Drain Current (Note 1)
I_DM
36
A
Avalanche Current (Note 1)
I_AR
9
A
Single Pulsed Avalanche Energy (Note 2)
E_AS
850
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.0
V/ns
Power Dissipation (T_C=25°C)
Linear Derating Factor above T_C=25°C
P_D
160
W
1.28
W/°C
Junction Temperature
T_J
+150
°C
Storage Temperature
T_STG
-55~+150
°C
Note: 1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=27mH, I_AS=9A, V_DD= 50V, R_G=25Ω, Starting T_J=25°C
3. I_SD ≤9A, di/dt ≤200A/μs, V_DD ≤BV_DSS, Starting T_J=25°C
4. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ_JA
θ_JC
RATINGS
50
0.78
„ ELECTRICAL CHARACTERISTICS (T_C=25°C, unless otherwise specified)
UNIT
°C/W
°C/W
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
BV_DSS V_GS=0V, I_D=250µA
1000
V
ΔBV_DSS/ΔT_J I_D=250μA, Referenced to 25°C
1.4
V/°C
I_DSS
V_DS=1000V, V_GS=0V
V_DS=800V, T_C=125°C
10 µA
100 µA
I_GSS
V_DS=0V ,V_GS=±30V
±100 nA
V_GS(TH)
R_DS(ON)
V_DS=V_GS, I_D=250µA
V_GS=10V, I_D=4A
3.0
5.0 V
1200 1700 mΩ
C_ISS
C_OSS
C_RSS
V_DS=25V, V_GS=0V, f=1.0MHz
2475 3220 pF
195 255 pF
16 24 pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-735.a