5N65 Datasheet, PDF (3/6 Pages) Unisonic Technologies – 5A, 650V N-CHANNEL POWER MOSFET

5N65
Power MOSFET
„ ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV_DSS V_GS =0V, I_D = 250μA
650
V
Drain-Source Leakage Current
I_DSS
V_DS =650V, V_GS = 0V
1 μA
Forward
Gate-Source Leakage Current
Reverse
I_GSS
V_GS =30V, V_DS = 0V
V_GS =-30V, V_DS = 0V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ I_D =250μA, Referenced to 25℃
ON CHARACTERISTICS
100
nA
-100
0.6
V/°C
Gate Threshold Voltage
V_GS(TH) V_DS =V_GS, I_D = 250μA
2.0
4.0 V
Static Drain-Source On-State Resistance
R_DS(ON) V_GS =10V, I_D = 2.5A
2.0 2.4 Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C_ISS
C_OSS
C_RSS
V_DS = 25V, V_GS = 0V,
f = 1.0MHz
515 670 pF
55 72 pF
6.5 8.5 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t_D(ON)
10 30 ns
Turn-On Rise Time
Turn-Off Delay Time
t_R
t_D(OFF)
V_DD = 325V, I_D =5A,
R_G = 25Ω (Note 1, 2)
42 90 ns
38 85 ns
Turn-Off Fall Time
t_F
46 100 ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q_G
Q_GS
Q_GD
V_DS = 520 V, I_D = 5A,
V_GS = 10 V (Note 1, 2)
15 19 nC
2.5
nC
6.6
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V_SD
V_GS = 0 V, I_S = 5A
1.4 V
Maximum Continuous Drain-Source Diode
Forward Current
I_S
5A
Maximum Pulsed Drain-Source Diode
Forward Current
I_SM
20 _A
Reverse Recovery Time
Reverse Recovery Charge
t_rr
V_GS = 0 V, I_S =5A,
Q_RR dIF / dt = 100 A/μs (Note 1)
300
ns
2.2
μC
Note 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-592.B