5N65 Datasheet, PDF (2/6 Pages) Unisonic Technologies – 5A, 650V N-CHANNEL POWER MOSFET

5N65
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (T_C = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V_DSS
650
V
Gate-Source Voltage
V_GSS
±30
V
Avalanche Current (Note 2)
I_AR
5
A
Continuous Drain Current
I_D
5
A
Pulsed Drain Current (Note 2)
I_DM
20
A
Avalanche Energy
Single Pulsed (Note 3)
E_AS
Repetitive (Note 2)
E_AR
210
mJ
10
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation
TO-220
TO-220F/TO-220F1
P_D
100
W
36
TO-251 / TO-252
54
Junction Temperature
T_J
+150
°C
Operation Temperature
T_OPR
-55 ~ +150
°C
Storage Temperature
T_STG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by T_J(MAX)
3. L = 16.8mH, I_AS = 5A, V_DD = 50V, R_G = 25 Ω, Starting T_J = 25°C
4. ^ISD ^{≤ 4.5A, di/dt ≤ 200A/μs, V}DD ^{≤ BV}DSS^{, Starting T}J ^{= 25°C}
„ THERMAL DATA
Junction to Ambient
Junction to Case
PARAMETER
TO-220
TO-220F/TO-220F1
TO-251 / TO-252
TO-220
TO-220F/TO-220F1
TO-251 / TO-252
SYMBOL
θ_JA
θ_JC
RATINGS
62.5
62.5
160
1.25
3.47
2.3
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-592.B